a p18p10gh/j-hf advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -100v simple drive requirement r ds(on) 180m fast switching characteristic i d -12a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.5 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice halogen-free product 201501134 total power dissipation storage temperature range rating -100 + 20 -12 -48 1 35.7 -55 to 150 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v drain current, v gs @ 10v -10 maximum thermal resistance, junction-ambient (pcb mount) 3 -55 to 150 parameter operating junction temperature range thermal data pulsed drain current 1 g d s g d s to-252(h) g d s to-251(j) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap18p10gj) is available for low-profile applications. .
ap18p10gh/j-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-1ma -100 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-8a - - 180 m v gs =-4.5v, i d =-6a - - 210 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds = -10v, i d = -8a - 14 - s i dss drain-source leakage current v ds =-80v, v gs =0v - - -10 ua drain-source leakage current (t j =125 o c) v ds =-80v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-8a - 16 25.6 nc q gs gate-source charge v ds =-80v - 4.4 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 8.7 - nc t d(on) turn-on delay time 2 v ds =-50v - 9 - ns t r rise time i d =-8a - 14 - ns t d(off) turn-off delay time r g =3.3 -45- ns t f fall time v gs =-10v - 40 - ns c iss input capacitance v gs =0v - 1590 2550 pf c oss output capacitance v ds =-25v - 110 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 8 12 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-12a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-8a, v gs =0v, - 49 - ns q rr reverse recovery charge di/dt=-100a/s - 110 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board .
a p18p10gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 120 150 180 210 240 270 300 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-8a t c =25 0 10 20 30 40 0 4 8 12 16 20 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -12a v g = -10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 5 10 15 20 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -5.0v -4.5v v g = -3.0v .
ap18p10gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -80v i d = -8a 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0 2.5 5 7.5 10 12.5 15 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v operation in this area limited by r ds(on) .
ap18p10gh/j-hf marking information to-251 to-252 5 part numbe r package code meet rohs requirement for low voltage mosfet only 18p10gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 18p10gh ywwsss meet rohs requirement for low voltage mosfet only .
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